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AOTF404 参数 Datasheet PDF下载

AOTF404图片预览
型号: AOTF404
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 113 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AOTF404
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOTF404/L uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge.
This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications.
-RoHS Compliant
-AOTF404L Halogen Free
Features
V
DS
(V) = 105V
(V
GS
=10V)
I
D
= 26 A
R
DS(ON)
< 28 mΩ (V
GS
=10V)
R
DS(ON)
< 31 mΩ (V
GS
= 6V)
100% UIS Tested!
TO-220FL
D
G
G
D S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
C
C
Maximum
105
±25
26
18
90
5.8
4.5
37
68
43
21
2.2
1.38
-55 to 175
Units
V
V
A
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
Symbol
t
10s
Steady-State
Steady-State
R
θJA
R
θJC
T
C
=25°C
A
A
mJ
W
W
°C
Max
12
58
3.5
Units
°C/W
°C/W
°C/W
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
B
Typ
10
48.5
2.9
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com