AOT474/AOTF474
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=75V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±25V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=30A
T
J
=125°C
V
DS
=5V, I
D
=30A
2.6
200
9.4
18
67
0.73
1
128
2240
V
GS
=0V, V
DS
=30V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
355
22
1.4
39
V
GS
=10V, V
DS
=30V, I
D
=30A
11
8
V
GS
=10V, V
DS
=30V, R
L
=1Ω,
R
GEN
=3Ω
I
F
=30A, dI/dt=500A/µs
2
Min
75
Typ
Max
Units
V
1
5
100
3.4
4
11.3
21.5
µA
nA
V
A
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
2805
507
36
2.8
49.6
13.8
14
15
34
42
4.5
3370
660
50
4.2
60
17
20
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
35
330
50
472
65
614
Body Diode Reverse Recovery Charge I
F
=30A, dI/dt=500A/µs
ns
nC
A. The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep initial
T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev 0:February 2009
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2009
www.aosmd.com
Page 2 of 7
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
