AOT10N60 / AOTF10N60
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
STATIC PARAMETERS
BV
DSS
BV
DSS
/∆T
J
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
g
FS
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
I
D
=250µA, V
GS
=0V
V
DS
=600V, V
GS
=0V
V
DS
=480V, T
J
=125°C
V
DS
=0V, V
GS
=±30V
V
DS
=V
GS
, I
D
=250µA
V
GS
=10V, I
D
=5A
V
DS
=40V, I
D
=5A
3
4
0.6
15
0.73
1
10
36
1100
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
105
7.5
3
1320
130
9.3
3.8
31.1
V
GS
=10V, V
DS
=480V, I
D
=10A
6.4
14.4
28
V
GS
=10V, V
DS
=300V, I
D
=10A,
R
G
=25Ω
I
F
=10A,dI/dt=100A/µs,V
DS
=100V
66
76
64
290
3.9
1600
160
11
6
40
10
20
35
80
95
80
350
4.7
600
700
0.65
1
10
±100
5
0.75
V
V
V/ C
µA
nA
V
Ω
S
V
A
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
µC
o
Parameter
Conditions
Min
Typ
Max
Units
Diode Forward Voltage
I
S
=1A, V
GS
=0V
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=10A,dI/dt=100A/µs,V
DS
=100V
A: The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C.
4.4
G. L=60mH, I
AS
=4.4A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C
Rev 0. July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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