AOU401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-30V
I
D
=-20A
Capacitance (pF)
4000
C
iss
8
-V
GS
(Volts)
3200
6
2400
4
1600
C
oss
C
rss
2
800
0
0
5
25 30 35 40 45
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
15
20
50
0
0
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
100.0
10µs
100µs
-I
D
(Amps)
10ms
DC
1.0
T
J(Max)
=175°C, T
A
=25°C
Power (W)
10.0
R
DS(ON)
limited
1ms
1000
800
600
400
200
0
0.0001
T
J(Max)
=175°C
T
A
=25°C
0.1
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=2.5°C/W
1
10
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
0.001
0.01
0.1
1
Single Pulse
0.01
0.00001
0.0001
T
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
