AOU405
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU405 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and low
gate resistance. With the excellent thermal resistance
of the TO-251 package, this device is well suited for
high current load applications.
Standard Product
AOU405 is Pb-free (meets ROHS & Sony 259
specifications). AOU405L is a Green Product
ordering option. AOU405 and AOU405L are
electrically identical.
TO-251
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Features
V
DS
(V) = -30V
I
D
= -18A (V
GS
= -10V)
R
DS(ON)
< 34mΩ (V
GS
= -10V)
R
DS(ON)
< 60mΩ (V
GS
= -4.5V)
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
Maximum
-30
±20
-18
-18
-40
-18
40
60
30
2.5
1.6
-55 to 175
Units
V
V
A
A
mJ
W
W
°C
T
A
=25°C
G
G
T
A
=100°C
I
D
I
DM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
16.7
40
1.8
Max
25
50
2.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
