AOU417
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU417 uses advanced trench technology to
provide excellent RDS(ON), and low gate charge.
This device is suitable for use as a load switch or in
PWM applications.
Standard product AOU417 is Pb-
free (meets ROHS & Sony 259 specifications).
AOU417L is a Green Product ordering option.
AOU417 and AOU417L are electrically identical
.
Features
V
DS
(V) = -30V
I
D
= -18A (V
GS
= -10V)
R
DS(ON)
< 22mΩ (V
GS
= -10V)
R
DS(ON)
< 40mΩ (V
GS
= -4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B,G
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
Power Dissipation
B
T
C
=25°C
T
C
=100°C
C
Maximum
-30
±20
-18
-18
-40
-18
16.2
50
25
-55 to 175
Units
V
V
A
A
mJ
W
°C
T
A
=25°C
G
G
T
A
=100°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
C
A
Steady-State
Steady-State
Symbol
R
θJA
R
θJL
Typ
105
2.5
Max
125
3
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
