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AOU448 参数 Datasheet PDF下载

AOU448图片预览
型号: AOU448
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 72 K
品牌: AOSMD [ ALPHA & OMEGA SEMICONDUCTORS ]
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AOU448
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU448 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
Standard
Product AOU448 is Pb-free (meets ROHS & Sony
259 specifications). AOU448L is a Green Product
ordering option. AOU448 and AOU448L are
electrically identical.
TO-251
D
Top View
Drain Connected
to Tab
G
S
Features
V
DS
(V) = 30V
I
D
= 75A
R
DS(ON)
< 5.6mΩ (V
GS
= 10V)
R
DS(ON)
< 9mΩ (V
GS
= 4.5V)
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
30
±20
75
56
200
30
45
50
25
-55 to 175
Units
V
V
A
A
mJ
W
°C
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
T
C
=25°C
Repetitive avalanche energy L=0.1mH
Power Dissipation
B
T
C
=100°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Symbol
Steady-State
Steady-State
R
θJC
Typ
44
2
Max
55
3
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.