AOZ9004B
Block Diagram
EB+
R1
220Ω
0V Battery
Charge
Function
VDD
Counter/
Logic
Oscillator
Over-
Discharge
Comp
VDD
Single-Cell
Lithium-Ion/
Lithium Polymer
Battery
C1
0.1μF
Over-Charge
Comp
VSS
Charger
Detection
Discharge
Over-Current
Comp
RVDM
Charge
Over-Current
Comp
VM
RVMS
Short-Circuit
Comp
R2
2kΩ
Battery Protection IC
N2
N1
OUTM
EB-
Dual Common-Drain MOSFET
AOZ9004B
Figure 2. AOZ9004B Function Block Diagram
Absolute Maximum Ratings
Exceeding the Absolute Maximum ratings may damage the device.
Parameter
Rating
VDD to VSS
-0.3V to +12V
-28V to +0.3V
-0.3V to +12V
VM to VDD
MOSFET Gate-to-Source Voltage
Continuous Drain Current(4)
(RθJA = 95°C/W, TA = 25°C)
(RθJA = 95°C/W, TA = 85°C)
5A
3A
Pulsed Drain Current
30A
Storage Temperature (TS)
Operating Temperature (TA)
-55°C to +125°C
-40°C to +85°C
Power Dissipation(6)
(RθJA = 95°C/W, TA = 25°C)
(RθJA = 95°C/W, TA = 85°C)
1.1W
0.5W
Note:
6. The value of RθJA is measured with the device mounted on 1-in2 FR-4 board with 2-oz. copper, in a still air
environment with TA = 25°C. The value in any given application depends on the user’s specific board design.
Rev. 1.2 August 2008
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AOS [ ALPHA & OMEGA SEMICONDUCTORS ]
