TF12A80
Electrical Characteristics
(Tj=25 °C unless otherwise specified)
Symbol
Items
Repetitive Peak Off-State
Current
Peak On-State Voltage
Ⅰ
Ⅱ
Ⅲ
Ⅰ
Ⅱ
Ⅲ
Non-Trigger Gate Voltage
Critical Rate of Rise Off-State
Voltage
Holding Current
T
J
= 125 °C, V
D
= V
DRM
R
L
=3.3kΩ
T
J
= 125 °C
V
D
=2/3 V
DRM
I
T
=0.2A
Gate Trigger Voltage
V
D
=
12
V, R
L
=30
Ω
Gate Trigger Current
V
D
=
12V,
R
L
=30
Ω
Conditions
V
D
= V
DRM
, Single Phase, Half Wave
T
j
= 125 °C
I
TM
= 17 A, tp=380㎲
Ratings
Min.
---
Typ.
---
Max.
2
.0
1.55
30
30
30
1.5
1.5
1.5
-
─
50
Unit
I
DRM
V
TM
I
+GT1
I
-GT1
I
-GT3
V
+GT1
V
-GT1
V
-GT3
V
GD
dv/dt
I
H
mA
V
---
─
─
─
─
─
─
---
─
─
─
─
─
─
─
─
--
mA
V
0.2
V
200
─
V
/㎲
mA
2/6