CD8C60SR
Sensitive Gate Silicon Controlled Rectifiers
Symbol
○
2. Anode
TO-252
BV
DRM
= 600V
I
T(RMS)
=
8
A
▼
○
3.Gate
1.Cathode
I
TSM
=
70A
○
1 2
3
Features
◆
◆
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
T(RMS)
=
8
A )
General Description
Apollo Electron’s SCR is suitable for the application where requiring high bidirectional blocking voltage
capability and also suitable for over voltage protection, motor control circuit in power tool, inrush cur-
rent limit circuit and heating control system.
ABSOLUTE MAXIMUM RATINGS
Paramter
Storage Junction Temperature Range
Operating Junction Temperature Range
Repetitive Peak Off-State Voltage T j=25℃
Repetitive Peak Reverse Voltage
RMS On-State Current (180° conduction angle) TI=105℃
Average On-Stage Current (180° conduction angle) TI=105℃
Non Repetitive Surge Peak On-State Current(T j=25℃)
tp=10ms
tp=8.3ms
I²t Value For Fusing tp=10ms
Critical Rate Of Rise Of On-State Current IG=2½IGT,
tr≤100ns, f=50Hz, T j=110℃
Symbol
Tstg
Tj
V
DRM
V
RRM
I
T(RMS)
I
T(AV)
I
TSM
I²t
dl/dt
I
GM
P
G(AV)
Value
-40~150
-40~110
600
600
8
5
70
73
24.5
50
4
1
Units
℃
℃
V
V
A
A
A
A²s
A/us
A
W
Peak Gate Current tp=20us, T j=125℃
Average Gate Power Dissipation T j=125℃
O c t,
2010. Rev.0
copyright @ Apollo Electron Co., Ltd. All rights reserved.
1/4
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
