CR100-8
Sensitive Gate Silicon Controlled Rectifiers
Symbol
○
TO-92
3.
Anode
BV
DRM
= 600V
I
T(RMS)
= 1.0A
▼
○
2.Gate
I
TSM
= 10A
1
1.Cathode
○
2
3
Features
Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 1.0 A )
◆
Low On-State Voltage (1.3V(Typ.))
◆
Repetitive
General Description
Sensitive-gate triggering thyristor is suit able for the a pplication where g ate cu rrent lim ited such as
small motor control, gate driver for large thyristor, sensing and detecting circuits.
This device may substitute for MCR100-6, MCR100-8 series.
Absolute Maximum Ratings
Symbol
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
FGM
V
RGM
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
sine wave,50 to 60Hz
half sine wave : T
C
=
83
°C
All
Conduction Angle
1/2 Cycle, 60Hz, sine wave
non-repetitive , t = 8.3ms
t = 8.3ms
T
A
= 25 °C, pulse width
≤
1.0
㎲
T
A
= 25 °C, t = 8.3ms
T
A
= 25 °C, pulse width
≤
1.0
㎲
T
A
= 25 °C, pulse width
≤
1.0
㎲
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I
2
t
for Fusing
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Ratings
600
0.5
1.0
10
0.415
2
0.1
1
5.0
- 40 ~ 110
- 40 ~ 150
Units
V
A
A
A
A
2
s
W
W
A
V
°C
°C
April,
2010. Rev.1
copyright @ Apollo Electron Co., Ltd. All rights reserved.
1
/5
APOLLOELECTRON [ Apollo Electron Co., Ltd. ]
