10V45
10A Surface Mount Super Low Barrier Diode
Features
• Electrostatic discharge (ESD) test under IEC6100-4-2
standard >16ΚV.
•
Low forward voltage drop.
•
Excellent high temperature stability.
•
Fast switching capability.
•
Suffix "G" indicates Halogen-free part, ex. 10V45 .
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Outline
TO-277B
0.264 (6.70)
0.248 (6.30)
PIN 2
PIN 1
PIN 3
1
0.073 (1.85)
0.069 (1.75)
0.163 (4.13)
0.151 (3.83)
2
3
0.077 (1.96)
0.069 (1.76)
0.028 (0.71)
0.016 (0.41)
0.216 (5.48)
0.208 (5.28)
0.028 (0.71)
0.016 (0.41)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant.
.
•
Case : Molded plastic, TO-277B
•
Lead : Solder plated, solderable per MIL-STD-750,
Method 2026 .
•
Polarity: Indicated by cathode band .
•
Mounting Position : Any.
•
Weight : Approximated 0.093 grams .
0.037 (0.95)
0.033 (0.85)
0.124 (3.15)
0.112 (2.85)
0.037 (0.95)
0.033 (0.85)
0.145 (3.69)
0.133 (3.39)
0.014 (0.35)
0.010 (0.25)
0.069 (1.74)
0.057 (1.44)
0.049 (1.25)
0.037 (0.95)
Dimensions in inches and (millimeters)
Maximum ratings and electrical characteristics
Rating at 25
O
C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Forward rectified current
Forward surge current
Thermal resistance
Operating and Storage temperature
Parameter
Reverse breakdown voltage
I
R
= 0.5mA
I
F
= 8A, T
J
= 25
O
C
Forward voltage drop
I
F
= 10A, T
J
= 25 C
I
F
= 10A, T
J
= 125
O
C
V
R
= V
RRM
T
J
= 25
O
C
Reverse current
V
R
= V
RRM
T
J
= 100
O
C
V
R
= V
RRM
T
J
= 150
O
C
Note : 1.FR-4 PCB, 2oz.Copper.
2.Polymide PCB, 2oz.Copper.Cathode pad dimensions 18.8mm x 14.4mm.Anode pad dimensions 5.6mm x 14.4mm.
O
Conditions
Symbol
10V45
10V45
UNIT
V
RRM
V
RWM
V
RM
V
R(RMS)
I
O
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Junction to ambient(1)
Junction to ambient(2)
I
FSM
R
θJA
R
θJA
T
J
, T
STG
Conditions
Symbol
V
(BR)R
MIN.
45
400
V
F
420
370
0.051
I
R
5
27
420
470
410
0.3
15
75
mA
mV
32
10
275
73
31
-65 ~ +150
TYP.
MAX.
O
45
V
A
A
A
C/W
C/W
O
O
C
UNIT
V
1
ASEMI [ 台湾ASEMI ]
