MBR10150
Dual High-Voltage Schottky Rectifiers
◆
Half Bridge Rectified、Common Cathode Structure.
Multilayer Metal -Silicon Potential Structure.
Low Power Waste，High Efficiency.
Beautiful High Temperature Character.
Have Over Voltage protect loop，high reliability.
RoHs Product.
REV:1.01
Productor
Character
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◆
◆
◆
◆
Typical Reference
Data
VRRM= 150V
IF(AV)= 10A
Primary Use
● Low Voltage High Frequency Switching Power Supply.
● Low Voltage High Frequency
● Low Voltage Continued
Invers Circuit.
Circuit and Protection Circuit.
■ MBR10150 Schottky diode,in the manufacture uses the main
process technology includes: Silicon epitaxial substrate, P+
loop technology,The potential metal and the silicon alloy
technology, the device uses the two chip, the common cathode,
the plastic package structure.
Absolute Maximum Ratings
Item
Maximal Inverted Repetitive Peak Voltage
Maximal DC Interdiction Voltage
Average Rectified Forward Current TC=150℃
Device
Unilateral
Whole
Summarize
Polarity
Symbol
VRRM
VDC
IFAV
MBR10150
150
150
10
5
Unit
A
A
℃
℃
Forward Peak Surge Current(Rated Load 8.3 Half
Mssine Wave-According to JEDEC Method)
Operating Junction Temperature
Storage Temperature
IFSM
TJ
TSTG
150
-40- +175
-40- +175
Electricity Character
Item
IR
VF
Test
TJ =25℃
TJ =125℃
TJ =25℃
Condition
VR=VRRM
IF=5A
Minimum
Representat
ive
MBR10150
100
1
0.90
Unit
uA
mA
V
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