MBR1060 THUR MBR1065
Dual High-Voltage Schottky Rectifiers
REV:1.01
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Half Bridge Rectified、Common Cathode Structure.
Multilayer Metal -Silicon Potential Structure.
Low Power Waste，High Efficiency.
Beautiful High Temperature Character.
Have Over Voltage protect loop，high reliability.
RoHs Product.
Productor
Character
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◆
◆
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Typical Reference
Data
VRRM= 60V
IF(AV)= 10A
VRRM= 65V
IF(AV)= 10A
Primary Use
● Low Voltage High Frequency Switching Power Supply.
● Low Voltage High Frequency
● Low Voltage Continued
Invers Circuit.
Circuit and Protection Circuit.
■ MBR1060、MBR1065 Schottky diode,in the manufacture uses
the main process technology includes: Silicon epitaxial
substrate, P+ loop technology,The potential metal and the
silicon alloy technology, the device uses the two chip, the
common cathode, the plastic half package structure.
Absolute Maximum Ratings
Item
Maximal Inverted Repetitive Peak Voltage
Maximal DC Interdiction Voltage
Average Rectified Forward Current TC=150℃
Device
Unilateral
Whole
Summarize
Polarity
Symbol
VRRM
VDC
IFAV
MBR1060 MBR1065
60
65
60
65
10
5
Unit
A
A
℃
℃
Forward Peak Surge Current(Rated Load 8.3 Half
Mssine Wave-According to JEDEC Method)
Operating Junction Temperature
Storage Temperature
IFSM
TJ
TSTG
150
-40- +175
-40- +175
Electricity Character
Item
IR
VF
Test
TJ =25℃
TJ =125℃
TJ =25℃
Condition
VR=VRRM
IF=5A
Minimum
Representat
MBR1060 MBR1065
ive
100
2
0.75
0.78
Unit
uA
mA
V
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