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MBR20L100/MBR20L100F 参数 Datasheet PDF下载

MBR20L100/MBR20L100F图片预览
型号: MBR20L100/MBR20L100F
PDF下载: 下载PDF文件 查看货源
内容描述: 高压肖特基二极管 [High-Voltage Schottky Diodes]
分类和应用: 肖特基二极管高压
文件页数/大小: 3 页 / 217 K
品牌: ASEMI [ 台湾ASEMI ]
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MBR20L100/MBR20L100F
High-Voltage Schottky Diodes
Productor Character
fabricated by CMOS IC processing
Low Power Waste,High Efficiency.
Beautiful High Temperature Character.
Have Over Voltage protect loop,high reliability.
RoHs Product.
Primary Use
● Low Forward Voltage Drop.
● Reliable High Temperature Operation.
● Softest, fast switching capability.
● 150℃ Operating Junction Temperature
1
2
3
TO-220AB
REV:1.01
1
ITO-220AB
2
3
Summarize
■ MBR20L100/MBR20L100F Device optimized for ultra-low
forward voltage drop to maximize efficiency in Power
Supply applications
Device
ITO-220AB-1.74g
Weight :
TO-220AB-1.96g
Absolute Maximum Ratings
Item
Maximal Inverted Repetitive Peak Voltage
*Average Rectified Forward Current (Rated VR-20Khz Square
Wave) - 50% duty cycle
Typical Thermal Resistance (per leg)
Package = TO-220AB
Package =ITO-220AB
Symbol
VRRM
IFAV
Jc
Data
100
20
2
4
Unit
V
A
/W
/W
Forward Peak Surge Current(Rated Load 8.3 Half
Mssine Wave-According to JEDEC Method)
Maximum Rate of Voltage Change ( at Rated VR )
Peak Repetitive Reverse Surge Current (2uS-1Khz)
Operating Junction Temperature
Storage Temperature
IFSM
dv/dt
IRRM
TJ
TSTG
200
10000
1
-40- +150
-40- +150
A
V/uS
A
Electricity Character
Item
IR
VF
TJ
TJ
TJ
TJ
Test Condition
=25
VR=VRRM
=125
=25
IF=10A
=125
IF=10A
TPY.
MAX.
100
100
0.72
0.64
Unit
uA
mA
V
V
0.6
*IF(AV)= 10A×2