MBR3080 THUR MBR30100
Dual High-Voltage Schottky Rectifiers
REV:1.01
◆ Half Bridge Rectified、Common Cathode Structure.
Productor
Character
◆ Multilayer Metal -Silicon Potential Structure.
◆ Low Power Waste，High Efficiency.
◆ Beautiful High Temperature Character.
◆ Have Over Voltage protect loop，high reliability.
◆ RoHs Product.
Typical Reference
Data
VRRM= 80V
IF(AV)= 30A
VRRM= 90V
IF(AV)= 30A
Primary Use
● Low Voltage High Frequency Switching Power Supply.
● Low Voltage High Frequency
● Low Voltage Continued
Invers Circuit.
VRRM= 100V
IF(AV)= 30A
Circuit and Protection Circuit.
■ MBR3080、MBR3090、MBR30100 Schottky diode,in the
manufacture uses the main process technology includes:
Silicon epitaxial substrate, P+ loop technology,The
potential metal and the silicon alloy technology, the
device uses the two chip, the common cathode, the plastic
package structure.
Absolute Maximum Ratings
Item
Maximal Inverted Repetitive Peak Voltage
Maximal DC Interdiction Voltage
Average Rectified Forward Current TC=150℃
Device
Unilateral
Whole
Summarize
Polarity
Symbol
VRRM
VDC
IFAV
MBR3080 MBR3090 MBR30100 Unit
80
90
100
V
80
90
100
V
20
10
A
A
℃
℃
Forward Peak Surge Current(Rated Load 8.3 Half
Mssine Wave-According to JEDEC Method)
Operating Junction Temperature
Storage Temperature
IFSM
TJ
TSTG
150
-40- +175
-40- +175
Electricity Character
Item
IR
VF
Test
TJ =25℃
TJ =125℃
TJ =25℃
Condition
VR=VRRM
IF=15A
Minimum
Represent
MBR3080 MBR3090 MBR30100 Unit
ative
100
uA
1
0.82
0.84
0.86
mA
V
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