1N415E
SILICON MIXER DIODE
DESCRIPTION:
The
ASI 1N415E
is a Silicon Mixer
Diode Designed for Applications
Operating From 8.0 to 12.4 GHz.
PACKAGE STYLE DO- 23
FEATURES:
•
High burnout resistance
•
Low noise figure
•
Hermetically sealed package
MAXIMUM RATINGS
I
F
V
R
P
DISS
T
J
T
STG
20 mA
1.0 V
2.0
(ERGS)
@ T
C
= 25 °C
-55 °C to +150 °C
-55 °C to +150 °C
NONE
CHARACTERISTICS
SYMBOL
NF
V
SWR
Z
IF
frange
R
L
= 22
Ω
T
C
= 25 °C
TEST CONDITIONS
F = 9375 MHz
R
L
= 100
Ω
P
lo
= 1.0 mW
I
F
= 30 MHz
N
Fif
= 1.5 dB
MINIMUM TYPICAL
MAXIM
7.5
1.3
UNITS
dB
f = 1000 Hz
335
8.0
465
12.4
Ω
GHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
