SILICON MULTIPLIER VARACTOR DIODE
PACKAGE STYLE DO- 4
DESCRIPTION:
The
1N4396
is a High Power Silicon
Multiplier Varactor Diode.
MAXIMUM RATINGS
I
F
V
R
P
DISS
T
J
T
STG
θ
JC
O
O
200 mA
250 V
20 W @ T
C
= 25 C
-65 C to +150 C
-65 C to +175 C
5.0 C/W
O
O
O
O
1 = Anode
2 = Cathode
CHARACTERISTICS
SYMBOL
V
BR
C
T
R
S
P
OUT(X3)
I
R
= 10
µA
V
R
= 6.0 V
V
R
= 6.0 V
P
IN
= 30 W
T
C
= 25 C
O
TEST CONDITIONS
f = 1.0 MHz
f = 50 MHz
F
IN
= 150 MHz
MINIMUM
250
20
TYPICAL
MAXIMUM
50
UNITS
V
pF
Ohms
W
0.7
15
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
