1N5719
SILICON PIN DIODE
PACKAGE STYLE 01
DESCRIPTION:
The
1N5719
is a Silicon PIN Diode
Designed for General Purpose
Attenuator and Switching Applications
from 100 MHz to 3 GHz.
MAXIMUM RATINGS
I
F
V
R
P
DISS
T
J
T
STG
θ
JC
O
O
100 mA
150 V
250 mW @ T
A
= 25 C
-65 C to +200 C
-65 C to +200 C
0.7 C/mW
O
O
O
O
NONE
CHARACTERISTICS
SYMBOL
V
BR
C
T
R
S
τ
t
rr
I
R
= 10
µA
V
R
= 100 V
T
C
= 25 C
O
TEST CONDITIONS
f = 1.0 MHz
f = 100 MHz
I
R
= 250 mA
f = 20 mA
MINIMUM
150
TYPICAL
MAXIMUM
0.3
1.25
UNITS
V
pF
Ω
µ
S
µ
S
I
F
= 100 mA
I
F
= 50 mA
V
R
= 10 V
100
100
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
