2N3375
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI 2N3375
is Designed for
Class A,B,C Amplifier,Oscillator and
Driver Applications Covering the
VHF-UHF Region.
PACKAGE STYLE TO- 60(ISOLATED)
FEATURES INCLUDE:
•
Isolated Package
MAXIMUM RATINGS
I
C
V
CE
P
DISS
T
J
T
STG
θ
JC
O
O
1.5 A
40 V
11.6 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +200 C
15 C/W
O
O
O
O
1 = EMITTER
2 = BASE
3 = COLLECTOR
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CEX
BV
CBO
I
CEO
I
EBO
h
FE
V
CE(SAT)
C
ob
f
t
P
out
G
P
η
T
C
= 25 C
O
TEST CONDITIONS
I
C
= 200 mA
V
BE
= -1.5 V
I
C
= 500
µA
V
CE
= 30 V
V
EB
= 4.0 V
V
CE
= 5.0 V
I
C
= 500 mA
V
CB
= 30 V
V
CE
= 28 V
V
CE
= 28 V
I
C
= 150 mA
P
in
= 1.0 W
I
C
= 250 mA
I
B
= 100 mA
f = 1.0 MHz
f = 100 MHz
f = 400 MHz
I
C
= 100 mA
MINIMUM TYPICAL MAXIMUM
40
65
65
100
100
10
1.0
10
500
3.0
4.8
40
UNITS
V
V
V
µ
A
µ
A
---
V
pF
MHz
W
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
