2N3570
NPN SILICON HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The
2N3570
is Designed for High
Frequency Low Noise Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
I
C
V
CB
V
CE
V
EB
P
DISS
T
J
T
STG
θ
JC
O
O
PACKAGE STYLE TO- 72
50 mA
30 V
15 V
3.0 V
200 mW @ T
C
= 25 C
-65 C to +200 C
-65 C to +200 C
500 C/W
O
O
O
O
1 = EMITTER
3 = COLLECTOR
2 = BASE
4 = CASE
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
I
CBO
BV
EBO
h
FE
C
ob
h
FE
h
fe
r
b
´
C
C
P
OSC
N
F
I
C
= 2 mA
I
C
= 1.0
µA
V
CB
= 6.0 V
T
C
= 25 C
O
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
15
30
10
T
A
= 150 C
O
UNITS
V
V
µ
A
V
1.0
3.0
20
150
0.75
20
150
4.25
5
60
6
7
6
8
3.75
1
---
pF
---
---
pF
mW
dB
I
E
= 10
µA
V
CE
= 6.0 V
V
CB
= 6 V
V
CE
= 6 V
V
CE
= 6 V
V
CB
= 6 V
V
CC
= 20 V
V
CB
= 6 V
I
C
= 5 mA
I
C
= 5 mA
I
E
= -5 mA
I
C
= 15 mA
I
C
= 2 mA
R
G
= 50
Ω
f = 400 MHz
f = 79.8 MHz
f = 1.0 GHz
f = 1.0 GHz
I
C
= 5.0 mA
f = 1.0 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
