2N5070
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI 2N5070
is Designed for High
Power Linear Amplifier Application in the
2.0 to 75 MHz Range.
PACKAGE STYLE TO- 60
FEATURES INCLUDE:
•
Emitter Ballasted
•
Common Emitter Package
MAXIMUM RATINGS
I
C
V
CE
P
DISS
T
STG
θ
JC
O
3.3 A
10 A
(PEAK)
30 V
70 W @ T
C
= 25 C
-65 C to +200 C
2.5 C/W
O
O
O
1 = EMITTER
3 = COLLECTOR
2 = BASE
CASE = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CER
I
CEO
I
CEV
I
CBO
I
EBO
h
FE
C
ob
f
t
P
in
η
IMD
T
C
= 25 C
O
TEST CONDITIONS
I
C
= 200 mA
I
C
= 200 mA
V
CE
= 30 V
V
CE
= 60 V
V
CE
= 60 V
V
CB
= 60 V
V
EB
= 4.0 V
V
CE
= 5.0 V
I
C
= 1.0 A
I
C
= 3.0 A
f = 1.0 MHz
I
C
= 1.0 A
P
out
= 25 W
(PEP)
f
2
= 30.001 MHz
f = 50 MHz
Zg = 50
Ω
V
BE
= -1.5 V
V
BE
= -1.5 V
T
C
= 150 C
O
MINIMUM TYPICAL MAXIMUM
30
40
5.0
10
10
10
10
10
10
100
100
85
100
1.25
40
-30
UNITS
V
V
mA
mA
mA
mA
---
pF
MHz
W
%
dB
R
BE
= 5.0
Ω
V
CB
= 30 V
V
CE
= 15 V
V
CE
= 28 V
f
1
= 30 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
