NPN SILICON HIGH FREQUENCY TRANSISTOR
PACKAGE STYLE TO-39
DESCRIPTION:
The
2N5109
is a High Frequency
Transistor for General Purpose
Amplifier Applications.
MAXIMUM RATINGS
I
C
V
CE
P
DISS
400 mA
20 V
1.0 W @ T
A
= 25 C
O
2.5 W @ T
C
= 75 C
O
1 = Emitter
2 = Base
3 = Collector
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CER
BV
CBO
I
CEX
I
CEO
I
EBO
h
FE
V
CE(SAT)
f
t
C
OB
N
F
G
ve
P
in
I
C
= 5.0 mA
I
C
= 5.0 mA
I
C
= 100
µA
V
CE
= 35 V
V
CE
= 15 V
V
CE
= 15 V
V
EB
= 3.0 V
V
CE
= 15 V
V
CE
= 5.0 V
I
C
= 100mA
V
CE
= 15 V
V
CB
= 15 V
T
A
= 25 C
O
NONE
TEST CONDITIONS
R
BE
= 10Ω
V
BE
= -1.50 V
V
BE
= -1.50 V T
C
= 150 C
O
MINIMUM
20
40
40
TYPICAL
MAXIMUM
UNITS
V
V
V
5.0
20
100
mA
µ
A
µ
A
---
V
MHz
I
C
= 50 mA
I
C
= 360 mA
I
B
= 10 mA
I
C
= 50 mA
f = 200 MHz
f = 1.0 MHz
40
5.0
220
0.5
1200
3.5
3.0
1.1
0.1
pF
dB
dB
W
V
CE
= 15 V I
C
= 10 mA R
G
= 50
Ω
f = 200 MHz
V
CC
= 15 V I
C
= 50 mA
f = 50 to 216 MHz
V
CC
= 15 V I
C
= 50 mA Rs = 50
Ω
f = 200 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
