NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE TO-217
DESCRIPTION:
The
2N6093
is a High Gain Linear RF
Power Amplifier Used in Class A or
Class B Applications With Individual
Ballast Emitter Resistor and Built in
Temperature Sensing Diode.
MAXIMUM RATINGS
I
C
V
CE
P
DISS
T
J
T
STG
θ
JC
O
O
10 A
35 V
83.3 W @ T
C
= 75 C
-65 C to +200 C
-65 C to +200 C
1.50 C/W
O
O
O
O
¼-28 UNF Thread
1 = Emitter & Diode Cathode
2 = Collector
3 = Base
4 = Diode Anode
NONE
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
I
CES
BV
EBO
h
FE
V
F
h
fe
C
OB
P
IE
G
PE
η
C
IMD
T
C
= 25 C
O
TEST CONDITIONS
I
C
= 200 mA
I
C
= 200 mA
V
CE
= 60 V
I
E
= 20 mA
V
CE
= 6.0 V
I
F
= 10 mA
V
CE
= 28 V
V
CB
= 30 V
V
CC
= 28 V
f = 30 MHz
V
CC
= 28 V
I
C
= 20 mA
P
OE
= 75.0 W
I
C
= 20 mA
I
C
= 1.0 A
f = 50 MHz
f = 1.0 MHz
P
OE
= 37.5 W
I
C
= 5.0 A
T
C
= 55 C
O
MINIMUM
35
70
TYPICAL
MAXIMUM
UNITS
V
V
30
3.5
20
0.8
2.0
250
1.88
3.75
13
40
-30
mA
V
---
V
---
pF
W
dB
%
dB
P
OE
= 75.0 W
f = 30 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
