2SC1972
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI 2SC1972
is Designed for RF
power amplifiers on VHF band mobile
radio applications.
FEATURES INCLUDE:
•
•
•
Replaces Original
2SC1972
in
Most Applications
High Gain Reduces Drive
Requirements
Economical
TO-220CE
Package
PACKAGE STYLE TO-220AB (COMMON EMITTER)
MAXIMUM RATINGS
I
C
V
CBO
P
DISS
T
STG
θ
JC
3.5 A
35 V
25 W @ T
C
= 25 °C
-55 °C to +175 °C
6.0 °C/W
1 = BASE
2 = EMITTER
3 = COLLECTOR TAB = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
η
C
P
OUT
I
C
= 50 mA
I
C
= 10 mA
I
E
= 10 mA
T
C
= 25 °C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
17
35
4.0
100
500
UNITS
V
V
V
µA
µA
---
%
W
V
CES
= 25 V
V
EB
= 3.0 V
V
CE
= 10 V
V
CC
= 13.5 V
I
C
= 100 mA
P
IN
= 2.5 W
f =175 MHz
10
60
14
50
70
15
180
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
