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2SC2893 参数 Datasheet PDF下载

2SC2893图片预览
型号: 2SC2893
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体晶体管射频
文件页数/大小: 1 页 / 18 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
2SC2893
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI 2SC2893
is Designed for
use in UHF amplifiers up to 400 MHz.
PACKAGE STYLE .280 4L STUD
A
45°
C
FEATURES:
P
OUT
= 10.7 W Typical at 400 MHz
Omnigold™
Metallization System
B
E
B
D
C
E
J
E
I
MAXIMUM RATINGS
I
C
V
CB
V
CE
V
EB
P
DISS
T
J
T
STG
θ
JC
1.5 A
55 V
32 V
3.0 V
22 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
8.0 °C/W
D IM
A
B
C
D
E
F
G
H
I
J
K
F
G
H
K
M IN IM U M
in c h e s / m m
# 8 -3 2 U N C
M A X IM U M
in c h e s / m m
1 .0 1 0 / 2 5 .6 5
.2 2 0 / 5 .5 9
.2 7 0 / 6 .8 6
.0 0 3 / 0 .0 8
.1 1 7 / 2 .9 7
.5 7 2 / 1 4 .5 3
.1 3 0 / 3 .3 0
.2 4 5 / 6 .2 2
.6 4 0 / 1 6 .2 6
.1 7 5 / 4 .4 5
.2 7 5 / 6 .9 9
1 .0 5 5 / 2 6 .8 0
.2 3 0 /5 .8 4
.2 8 5 / 7 .2 4
.0 0 7 / 0 .1 8
.1 3 7 / 3 .4 8
.2 5 5 / 6 .4 8
.2 1 7 / 5 .5 1
.2 8 5 / 7 .2 4
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
I
EBO
I
CBO
h
FE
C
ob
P
out
η
c
T
C
= 25 °C
TEST CONDITIONS
I
C
= 60 mA
I
C
= 8.0 mA
V
CE
= 2.0 V
V
CB
= 30 V
V
CE
= 10 V
V
CB
= 28 V
V
CE
= 28 V
P
IN
= 0.63 W
I
C
= 400 mA
I
C
= 400 mA
f = 1.0 MHz
f = 400 MHz
V
BE
= 0 V
MINIMUM TYPICAL MAXIMUM
32
55
500
500
20
10
7.9
55
10.7
65
200
15
UNITS
V
V
µA
µA
---
pF
W
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
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