2SC2904
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI 2SC2904
is a silicon
epitaxial plana type transistor designed
for high power amplifiers in HF band.
PACKAGE STYLE .500 6L FLG
C
A
2x Ø N
FEATURES:
•
Internal Input Matching Network
•
P
G
= 11.5 dB at 1000 W/30 MHz
•
Omnigold™
Metalization System
D
FU LL R
B
G
.725/18,42
F
E
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
22 A
50 V
20 V
4.0 V
200 W @ T
C
= 25 °C
-55 °C to +175 °C
-55 °C to +175 °C
0.75 °C/W
D IM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
K
H
M IN IM U M
inches / m m
M
L
J
I
M AXIM U M
inches / m m
.150 / 3.43
.045 / 1.14
.210 / 5.33
.835 / 21.21
.200 / 5.08
.490 / 12.45
.003 / 0.08
.125 / 3.18
.725 / 18.42
.970 / 24.64
.090 / 2.29
.150 / 3.81
.120 / 3.05
.160 / 4.06
.220 / 5.59
.865 / 21.97
.210 / 5.33
.510 / 12.95
.007 / 0.18
.980 / 24.89
.105 / 2.67
.170 / 4.32
.285 / 7.24
.135 / 3.43
Common Emitter configuration
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
*
P
O
η
C
I
C
= 20 mA
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 100 mA
I
E
= 20 mA
V
CB
= 15 V
V
CB
= 3.0 V
V
CE
= 10 V
V
CE
= 12.5 V
I
C
= 1.0 A
P
IN
= 7.0 W
f = 30 MHz
MINIMUM TYPICAL MAXIMUM
50
20
4.0
5.0
5.0
10
100
55
110
60
180
UNITS
V
V
mA
mA
---
W
%
NOTE: *Pulse test, PW=150µS. duty=5%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
