AJT085
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2NL FLG
A
.025 x 45°
DESCRIPTION:
C
2X B
ØD
4x .062 x 45°
The
ASI AJT085
is Designed for
E
F
G
FEATURES:
•
Input Matching Network
•
•
Omnigold™
Metalization System
H
I
J
K
P
M
N
L
DIM
A
B
C
D
E
MINIMUM
inches / mm
MAXIMUM
inches / mm
.020 / 0.51
.100 / 2.54
.376 / 9.55
.110 / 2.79
.395 / 10.03
.193 / 4.90
.450 / 11.43
.125 / 3.18
.640 / 16.26
.890 / 22.61
.395 / 10.03
.004 / 0.10
.052 / 1.32
.118 / 3.00
.030 / 0.76
.396 / 10.06
.130 / 3.30
.407 / 10.34
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
O
O
8.0 A
40 V
300 W @ T
C
≤
100
O
C
-65 C to +250 C
-65 C to +200 C
0.75
O
C/W
O
O
F
G
H
I
J
K
L
M
N
P
.660 / 16.76
.910 / 23.11
.415 / 10.54
.007 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
ORDER CODE: ASI10547
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
I
CES
h
FE
P
G
η
C
I
C
= 25 mA
I
C
= 25 mA
I
E
= 10 mA
V
CE
= 35 V
T
C
= 25 C
O
NONETEST
CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
55
55
3.5
20
UNITS
V
V
V
mA
---
dB
%
V
CE
= 5.0 V
V
CC
= 50 V
MHz
I
C
= 2.0 A
P
OUT
= 85 W
f = 960 – 1215
20
7.5
40
200
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
