ALR325
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2L FLG(A)
DESCRIPTION:
The
ASI ALR325
is Designed for
D
G
2xR
H
J
K
P
4x .062 x 45°
2xB
A
.040 x 45°
C
E
F
FEATURES:
I
•
Input Matching Network
•
•
Omnigold™
Metalization System
L
N
M
DIM
A
MINIMUM
inches / mm
MAXIMUM
inches / mm
.135 / 3.43
.100 / 2.54
.050 / 1.27
.376 / 9.55
.110 / 2.79
.395 / 10.03
.193 / 4.90
.490 / 12.45
.100 / 2.54
.690 / 17.53
.890 / 22.61
.003 / 0.08
.052 / 1.32
.118 / 3.00
.145 / 3.68
.120 / 3.05
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
O
B
C
D
E
F
.396 / 10.06
.130 / 3.30
.407 / 10.34
18.75 A
55 V
730 W @ T
C
= 25
O
C
-65 C to +250 C
-65
O
C to +200
O
C
0.10
O
C/W
O
G
H
I
J
K
L
M
N
P
.510 / 12.95
.710 / 18.03
.910 / 23.11
.006 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
ORDER CODE: ASI10516
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
EBO
I
CES
h
FE
P
G
η
C
I
C
= 50 mA
I
C
= 50 mA
I
E
= 15 mA
V
CE
= 50 V
T
C
= 25 C
O
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
65
65
3.0
30
UNITS
V
V
V
mA
---
dB
%
V
CE
= 5.0 V
V
CC
= 45 V
GHz
I
C
= 5.0 A
P
OUT
= 325 W
f = 1.2 to 1.4
10
6.5
38
---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
