AM0912-080
RF POWER TRANSISTOR
DESCRIPTION:
The
ASI AM0912-080
is a Common
Base Transistor Designed for DME,
TACAN and IFF Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
•
Gold Metallization
•
Hermetic Package
•
Input/Output Matching
PACKAGE - .400 x .400 2NLFL
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
7.0 A
50 V
220 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +200 C
0.80 C/W
O
O
O
O
O
O
O
1 = COLLECTER
2 & 4 = BASE
3 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
I
CBO
h
FE
P
OUT
P
G
η
C
I
C
= 40 mA
I
C
= 40 mA
I
E
= 10 mA
V
CB
= 50 V
V
CE
= 5 V
T
C
= 25 C
TEST CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
65
65
3.0
12
UNITS
V
V
V
mA
---
W
dB
%
I
C
= 2.0 A
20
90
8.4
38
100
44
120
f = 960 to 1215 MHz
P
IN
= 13 W
V
CC
= 50 V
Pulse Width = 10
µS
Duty Cycle = 10%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/2
ASI [ ADVANCED SEMICONDUCTOR ]
