AM0912-150
RF POWER TRANSISTOR
PACKAGE - .400 X .500 2L FLG
DESCRIPTION:
The
ASI AM0912-150
is a Common
Base Transistor Designed for TCAS
and JTIDS Pulse Power Amplifier
Applications.
FEATURES INCLUDE:
•
Gold Metallization
•
Hermetic Package
•
Input/Output Matching
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
16.5 A
35 V
300 W @ T
C
=
≤
100 °C
-65 °C to +250 °C
-65 °C to +200 °C
0.57 °C/W
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
EBO
I
CES
h
FE
P
OUT
P
G
η
C
I
C
= 60 mA
T
C
= 25 °C
TEST CONDITIONS
I
C
= 100 mA
I
E
= 10 mA
V
CB
= 35 V
V
CE
= 5.0 V
V
CC
= 35 V
I
C
= 5.0 A
f = 960 to 1215 MHz
P
IN
= 26.7 W
MINIMUM TYPICAL MAXIMUM
55
55
3.5
25
20
300
7.0
38
330
7.4
45
UNITS
V
V
V
mA
---
W
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
