AM1517-025M
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI 1517-025M
is Designed for
Satellite communications applications
in the 1620 to 1660 MHz range.
PACKAGE STYLE .400 2NL FLG
A
.025 x 45°
2X B
C
F
ØD
E
4x .062 x 45°
FEATURES:
•
Internal Input/Output Matching Networks
•
P
G
= 8.5 dB at 25 W/1.5 – 1.7 GHz
•
Omnigold™
Metalization System
G
H
I
J
K
P
M
D IM
A
M IN IM U M
inches / m m
L
N
M A X IM U M
inches / m m
.020 / 0.51
.100 / 2.54
.376 / 9.55
.110 / 2.79
.39 5 / 10.03
.193 / 4.90
.450 / 11.43
.12 5 / 3.18
.64 0 / 16.26
.890 / 22.61
.39 5 / 10.03
.004 / 0.10
.052 / 1.32
.118 / 3.00
.030 / 0.76
.396 / 10.06
.130 / 3.30
.407 / 10.34
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
2.5 A
30 V
45 W @ T
C
≤
100 °C
-65 °C to +200 °C
-65 °C to +200 °C
3.3 °C/W
B
C
D
E
F
G
H
I
J
K
L
M
N
P
.660 / 16.76
.910 / 23.11
.415 / 10.54
.007 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
COMMON BASE
CHARACTERISTICS
SYMBOL
BV
CBO
BV
EBO
I
CBO
h
FE
C
ob
P
G
η
C
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 8.0 mA
I
E
= 8.0 mA
V
CE
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CC
= 28 V
P
IN
= 3.5 W
P
OUT
= 25 W
I
C
= 1.6 A
f = 1.0 MHz
f = 1620 – 1660 MHz
MINIMUM TYPICAL MAXIMUM
45
3.0
2.0
15
150
80
8.5
55
58
UNITS
V
V
mA
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
