AM81214-030
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI AM81214-030
is Designed for
1215 – 1400 MHz, L-Band Radar
Applications.
PACKAGE STYLE .250 2L FLG
FEATURES:
•
Internal Input/Output Matching Network
•
P
G
= 7.2 dB at 5.0 W(peak)/1400 MHz
•
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
2.75 A
32 V
63 W @ T
C
= 25 °C
-65 °C to +250 °C
-65 °C to +200 °C
2.4 °C/W
COMMON BASE
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
I
CES
h
FE
P
IN
P
G
η
C
V
CC
= 28 V
I
C
= 10 mA
I
C
= 20 mA
I
E
= 1.0 mA
V
CE
= 28 V
T
C
= 25 °C
NONETEST
CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
55
55
3.5
5.0
UNITS
V
V
V
mA
---
W
dB
%
V
CE
= 5.0 V
I
C
= 1.0 A
15
26
36
8.5
49
150
P
IN
= 5.0 W f = 1215 to 1400 MHz
7.2
45
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
