AM82731-012
NPN RF POWER TRANSISTOR
DESCRIPTION:
The
AM82731-012
is a Common
Base Device Designed for Pulsed S-
Band Pulse output and driver Radar
Amplifier Applications.
PACKAGE STYLE 400 2L FLG
FEATURES INCLUDE:
•
Input/Output Matching
•
Gold Metallization
•
Emitter Ballasting
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
2.0 A
46 V
50 W @ T
C
≤
50 °C
-65 °C to+250 °C
-65 °C to+200 °C
4.0 °C/W
1 = COLLECTOR
2 & 4 = BASE
3 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
I
CES
h
FE
P
OUT
η
C
P
G
Note:
T
C
= 25 °C
TEST CONDITIONS
I
C
= 7.0 mA
I
C
= 7.0 mA
I
E
= 1.0 mA
V
CE
= 40 V
V
CE
= 5 V
V
CC
= 40 V
I
C
= 600 mA
P
IN
= 3.0 W
f = 2.7 to 3.1 GHz
R
BE
= 10
Ω
MINIMUM
55
55
3.5
TYPICAL MAXIMUM
UNITS
V
V
V
0.5
30
12
30
6.0
300
mA
---
W
%
dB
Pulse Width = 100
μS
Duty Cycle = 10%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV.
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
