ASAT20
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI ASAT20
is Designed for
PACKAGE STYLE .250 2L FLG(A)
.020 x 45°
A
Ø .130 NOM.
.050 x 45°
FEATURES:
•
•
•
Omnigold™
Metalization System
D C
L
B
M
F
E
G
H
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
O
J
I
K
3.0 A
45 V
15 V
3.0 V
37.2 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
4.0
O
C/W
O
O
O
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
MINIMUM
inches / mm
MAXIMUM
inches / mm
.055 / 1.40
.124 / 3.15
.243 / 6.17
.635 / 16.13
.555 / 14.10
.739 / 18.77
.315 / 8.00
.002 / 0.05
.055 / 1.40
.075 / 1.91
.245 / 6.22
.092 / 2.34
.065 / 1.65
.253 / 6.43
.665 / 16.89
.565 / 14.35
.749 / 19.02
.325 / 8.26
.006 / 0.15
.065 / 1.65
.095 / 2.41
.190 / 4.83
.255 / 6.48
ORDER CODE: ASI10519
O
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
h
FE
C
OB
P
G
η
C
T
C
= 25 C
NONETEST
CONDITIONS
I
C
= 5.0 mA
I
C
= 5.0 mA
I
E
= 5.0 mA
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 28 V
P
OUT
= 20 W
I
C
= 1.0 A
f = 1.0 MHz
f = 1.65 GHz
MINIMUM TYPICAL MAXIMUM
45
12
3.0
15
150
20
9.2
45
UNITS
V
V
V
---
pF
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
