ASI2307
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI 2307
is Designed for General
Purpose Class C Power Amplifier
Applications up to 3000 MHz.
B
PACKAGE STYLE .250 2L FLG
A
ØD
C
E
.060 x 45°
CHAMFER
FEATURES:
•
P
G
= 9.5 dB min. at 7 W / 2300 MHz
•
Hermetic Microstrip Package
•
Omnigold™
Metalization System
DIM
A
L
G
H
J
F
I
K
M
NP
MINIMUM
inches / mm
MAXIMUM
inches / mm
.028 / 0.71
.740 / 18.80
.245 / 6.22
.128 / 3.25
.125 / 3.18
.110 / 2.79
.117 / 2.97
.560 / 14.22
.790 / 20.07
.225 / 5.72
.165 / 4.19
.003 / 0.08
.058 / 1.47
.119 / 3.02
.149 / 3.78
.032 / 0.81
.255 / 6.48
.132 / 3.35
.117 / 2.97
.570 / 14.48
.810 / 20.57
.235 / 5.97
.185 / 4.70
.007 / 0.18
.068 / 1.73
.135 / 3.43
.187 / 4.75
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
1.2 A
26 V
21.4 W @ T
C
≤
50
O
C
-65
O
C to +200
O
C
-65
O
C to +200
O
C
7.0
O
C/W
B
C
D
E
F
G
H
I
J
K
L
M
N
P
ORDER CODE: ASI10536
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
I
CBO
h
FE
C
ob
P
G
η
C
I
C
= 1 mA
I
C
= 5 mA
I
E
= 1 mA
V
CB
= 22 V
T
C
= 25 C
O
NONETEST
CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
44
44
3.5
0.5
UNITS
V
V
V
mA
---
pF
dB
%
V
CE
= 5.0 V
V
CB
= 22 V
V
CC
= 22 V
I
C
= 500 mA
f = 1.0 MHz
P
OUT
= 7.0 W
f = 2.3 GHz
30
300
8.5
9.5
33
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
