AVD150
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .400 2NL FLG
A
DESCRIPTION:
The
ASI AVD10
is Designed for
C
.025 x 45°
2X B
ØD
E
F
4x .062 x 45°
G
FEATURES:
•
Input Matching Network
•
•
Omnigold™
Metalization System
H
I
J
K
P
M
N
L
DIM
A
B
MINIMUM
inches / mm
MAXIMUM
inches / mm
.020 / 0.51
.100 / 2.54
.376 / 9.55
.110 / 2.79
.395 / 10.03
.193 / 4.90
.450 / 11.43
.125 / 3.18
.640 / 16.26
.890 / 22.61
.395 / 10.03
.004 / 0.10
.052 / 1.32
.118 / 3.00
.030 / 0.76
.396 / 10.06
.130 / 3.30
.407 / 10.34
MAXIMUM RATINGS
I
C
V
CC
P
DISS
T
J
T
STG
θ
JC
O
O
C
D
E
F
G
H
I
11 A
55 V
400 W @ T
C
= 25 C
-65 C to +250 C
-65 C to +200 C
0.3 C/W
O
O
O
O
.660 / 16.76
.910 / 23.11
.415 / 10.54
.007 / 0.18
.072 / 1.83
.131 / 3.33
.230 / 5.84
J
K
L
M
N
P
ORDER CODE: ASI10564
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CER
BV
EBO
I
CES
h
FE
C
ob
P
G
η
C
I
C
= 10 mA
I
C
= 15 mA
I
E
= 1 mA
V
CE
= 50 V
T
C
= 25 C
O
NONETEST
CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
65
65
3.5
12.5
UNITS
V
V
V
mA
---
pF
dB
%
V
CE
= 5.0 V
V
CB
= 28 V
V
CC
= 50 V
I
C
= 1.0 A
f = 1.0 MHz
P
OUT
= 150 W
f = 1025 - 1150 MHz
15
120
80
7.7
40
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
