B40-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
B40-28
is Designed for High
Reliability Class C Power Amplifier
Applications up to 250 MHz.
PACKAGE STYLE .380 4L STUD
.112x45°
A
FEATURES:
•
P
G
= 8.2 dB min. at 40 W /175 MHz
•
η
C
= 60 % min. at 40 W /175 MHz
•
Omnigold™
Metalization System
B
C
E
ØC
E
B
H I
J
D
MAXIMUM RATINGS
#8-32 UNC-2A
G
F
E
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
5.0 A
65 V
35 V
4.0 V
60 W
-65
O
C to +200
O
C
-65
O
C to +150
O
C
2.9
O
C/W
T
C
= 25
O
C
DIM
A
B
C
D
E
F
G
H
I
J
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.980 / 24.89
.370 / 9.40
.004 / 0.10
.320 / 8.13
.100 / 2.54
.450 / 11.43
.090 / 2.29
.155 / 3.94
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10859
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
CBO
BV
EBO
I
CES
I
CBO
h
FE
C
ob
P
G
η
C
I
C
= 200 mA
I
C
= 200 mA
I
C
= 10 mA
I
E
= 10 mA
V
CE
= 30 V
V
CB
= 30 V
V
CE
= 5.0 V
V
CB
= 30 V
V
CE
= 28 V
MHz
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
35
65
65
4.0
10
1.0
UNITS
V
V
V
V
mA
mA
---
pF
dB
%
REV. A
I
C
= 500 mA
f = 1.0 MHz
P
OUT
= 40 W
f = 175
5.0
200
65
8.2
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
