BLF368
RF POWER VDMOS TRANSISTOR
DESCRIPTION:
The
ASI BLF368
is a Dual Common
Source N-Channel Enhancement-
Mode VDMOS. designed for RF
Applications.
PACKAGE STYLE .385X.850 4LFG
MAXIMUM RATINGS
I
D
V
DSS
V
GS
P
DISS
T
J
T
STG
θ
JC
27 A
70 V
±20
V
465 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.35 °C/W
1 & 2 = DRAIN
3 & 4 = GATE
5 = SOURCE
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS
gM
R
DSON
I
DSAT
C
iss
C
oss
C
rss
G
ps
η
ψ
V
DS
= 28 V
V
DS
= 0 V
T
C
= 25 °C
TEST CONDITIONS
I
DS
= 120 mA
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 30 V
V
GS
= V
DS
V
GS
= 5.0 V
I
DS
= 15 A
V
DS
= 10 V
V
GS
= 0 V
I
DQ
= 1.2 A
f = 1.0 MHz
P
out
= 300 W
MINIMUM
65
TYPICAL
MAXIMUM
6.0
1.0
UNITS
V
mA
µ
A
V
mho
Ω
A
pF
dB
%
Relative
I
DS
= 600 mA
V
DS
= 10 V
V
GS
= 20 V
V
GS
= 20 V
V
DS
= 28 V
V
DS
= 28 V
f = 175 MHz
1.0
7.2
5.0
42
300
192
18
13
55
7.0
20:1
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
