BLF378
POWER MOSFET
DESCRIPTION:
N-Channel Enhancement Mode
The
ASI BLF378
is a N-Channel
Enhancement-Mode RF Power
MOSFET Designed for broadband RF
Applications up to 225 MHz.
FEATURES INCLUDE:
•
P
G
= 14 dB Min. at 225 MHz
•
20:1
Load VSWR Capability
•
Omnigold™
metalization system
PACKAGE STYLE .400 BAL FLG(D)
MAXIMUM RATINGS
I
D
V
DSS
V
GS
P
DISS
T
J
T
STG
θ
JC
18 A
125 V
20 V
500 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.35 °C/W
1 & 2 = DRAIN
3 & 4 = GATE
5 = SOURCE
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS
gM
R
DSON
I
DSAT
C
iss
C
oss
C
rss
P
GS
η
ψ
I
D
= 40 mA
V
DS
= 50 V
V
DS
= 0 V
V
GS
= V
DS
V
DS
= 10 V
V
GS
= 20 V
V
GS
= 20 V
V
DS
= 50 V
T
C
= 25 C
O
NONE
TEST CONDITIONS
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 30 V
I
DS
= 300 mA
V
GS
= 5.0 V
I
DS
= 6.0 A
V
DS
= 10 V
V
GS
= 0 V
f = 1.0 MHz
MINIMUM
125
TYPICAL MAXIMUM
5.0
1.0
UNITS
V
mA
µ
A
V
Mho
Ω
A
pF
dB
%
---
1.0
5.5
0.30
35
400
200
15
14
50
7.0
V
DS
= 50 V
I
DQ
= 0.8 A
f = 225 MHz
20:1
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
