BLF522
UHF POWER MOS TRANSISTOR
DESCRIPTION:
The
ASI BLF522
is Designed for
communications transmitter
applications in the UHF frequency
range.
PACKAGE STYLE .230 6L FLG
A
.040x45°
4X .025 R
.115
C
B
2
4
6
2XØ.130
FEATURES:
•
Designed for broadband operation.
•
High power gain
•
Omnigold™
Metalization System
.430 D
E
.125
G
H
I
J K
L
1
3
F
5
MAXIMUM RATINGS
V
DS
±
V
GS
V
DG
I
D
P
DISS
T
J
T
STG
θ
JC
50 V
30 V
50 V
1.6 A
30 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
6.0 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M INIM UM
inches / mm
M AXIM UM
inches / mm
.355 / 9.02
.115 / 2.92
.075 / 1.91
.225 / 5.72
.090 / 2.29
.720 / 18.29
.970 / 24.64
.355 / 9.02
.004 / 0.10
.120 / 3.05
.160 / 4.06
.230 / 5.84
.365 / 9.27
.125 / 3.18
.085 / 2.16
.235 / 5.97
.110 / 2.79
.730 / 18.54
.980 / 24.89
.365 / 9.27
.006 / 0.15
.130 / 3.30
.180 / 4.57
.260 / 6.60
1 & 2 Source 3 Gate 4 Drain 5 & 6 Source
CHARACTERISTICS
SYMBOL
V
(BR)DSS
I
DSS
I
GSS
V
GS
gM
R
DS(on)
I
Dsat
T
C
= 25 °C
NONETEST
CONDITIONS
I
DS
= 20 mA
V
DS
= 12.5 V
V
DS
= 0 V
V
GS
= 40 V
V
DS
= 10 V
V
GS
= 20 V
V
DS
= 10 V
±V
GS
= 30 V
I
DS
= 40 mA
V
GS
= 5.0 V
I
DS
= 3.2 A
V
GS
= 20 V
MINIMUM TYPICAL MAXIMUM
40
0.4
1.0
1.0
0.4
1.2
4.6
7.0
UNITS
V
mA
µA
V
Mho
Ω
A
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/2
ASI [ ADVANCED SEMICONDUCTOR ]
