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BLF861A 参数 Datasheet PDF下载

BLF861A图片预览
型号: BLF861A
PDF下载: 下载PDF文件 查看货源
内容描述: UHF功率LDMOS晶体管 [UHF POWER LDMOS TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 21 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
BLF861A
UHF POWER LDMOS TRANSISTOR
DESCRIPTION:
The
ASI BLF861A
ia a Silicon N-
channel enhancement mode lateral D-
MOS push-pull transistor.
PACKAGE STYLE .385X.850 4LFG
FEATURES:
Internal input-output matching
Omnigold™
Metalization System
MAXIMUM RATINGS
I
D
V
DS
V
GS
P
DISS
T
J
T
STG
θ
JC
18 A
65 V
±15
V
318 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
0.55 °C/W
1 & 2 = DRAIN
3 & 4 = GATE
5 = SOURCE
CHARACTERISTICS
SYMBOL
BV
DSS
I
DSS
I
DSX
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
G
p
η
D
V
DS
= 32 V
V
DS
= 10 V
V
DS
= 0 V
I
D
= 1.5 mA
T
C
= 25 °C
TEST CONDITIONS
V
GS
= 0 V
V
GS
= V
GSth
+ 9 V
V
GS
=
±15
V
V
DS
= 10 V
V
GS
= V
GSth
+ 9 V
V
DS
= 10 V
V
GS
= 0 V
P
out
= 150 W
f = 1.0 MHz
f = 860 MHz
MINIMUM
65
TYPICAL
MAXIMUM
2.2
UNITS
V
µA
A
nA
V
mΩ
S
pF
dB
%
18
25
4.0
160
4.0
82
40
6.0
13.5
50
14.5
5.5
I
D
= 150 mA
I
D
= 4.0 A
I
D
= 4.0 A
V
DS
= 32 V
V
DS
= 32 V
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1