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BLV11 参数 Datasheet PDF下载

BLV11图片预览
型号: BLV11
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体射频双极晶体管放大器局域网
文件页数/大小: 1 页 / 25 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
BLV11
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLV11
is Designed for
Class C, 12.5 Volt operation in FM
Amplifier Applications up to 250 MHz.
FEATURES INCLUDE:
P
G
= 9.0 dB Typical at 175 MHz
Emitter Ballasting
Omnigold™
Metalization System
PACKAGE STYLE .375 4L FLG
MAXIMUM RATINGS
I
C
V
CE
V
CB
P
DISS
T
J
T
STG
θ
JC
O
O
3.0 A
18 V
36 V
37 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
4.6 C/W
O
O
O
O
1 = Collector 2 = Base
3 & 4 = Emitter
ORDER CODE: ASI10492
O
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CES
BV
CEO
BV
EBO
I
CBO
h
FE
C
ob
P
G
η
C
I
C
= 20 mA
I
C
= 50 mA
I
C
= 50 mA
I
E
= 5.0 mA
V
CB
= 15 V
V
CE
= 5.0 V
T
C
= 25 C
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
2.0
UNITS
V
V
V
V
mA
---
pF
dB
%
I
C
= 250 mA
f = 1.0 MHz
P
OUT
= 15 W
f = 175 MHz
5.0
50
45
V
CB
= 12.5 V
V
CE
= 13.5 V
8.0
60
9.0
65
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1