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BLV32F 参数 Datasheet PDF下载

BLV32F图片预览
型号: BLV32F
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体晶体管射频
文件页数/大小: 1 页 / 22 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
BLV32F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLV32F
is Designed for in
linear v.h.f. amplifiers of television
transmitters and transporters
.
FEATURES:
Diffused emitter ballasting resistors
P
G
= 16 dB at 10 W/224 MHz
Omnigold™
Metalization System
PACKAGE STYLE .500 6L FLG
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
O
O
4.0 A
60 V
32 V
60 V
4.0 V
82 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
2.1 C/W
O
O
O
O
1= Collector 2= Base 3 and 4= Emitter
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CES
h
FE
C
C
P
G
I
C
= 15 mA
I
E
= 10 mA
V
CE
= 32 V
V
CE
= 25 V
V
CB
= 25 V
V
CE
= 25 V
T
C
= 25 C
O
NONETEST
CONDITIONS
I
C
= 100 mA
MINIMUM TYPICAL MAXIMUM
32
60
4.0
5.0
UNITS
V
V
V
mA
---
pF
dB
I
C
= 1.6 A
f = 1.0 MHz
P
OUT
= 10 W
f = 224 MHz
20
50
16
120
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1