ASI BLV59
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLV59
is a Common
Emitter Device Designed for
Class A and AB Amplifier
Applications in TV Band IV-V
Transmitters.
FEATURES INCLUDE:
•
Gold Metalization
•
Intrnal Matching
•
Emitter Ballasting
PACKAGE STYLE .230 6FLG.
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
O
O
10 A
50 V
80 W @ T
C
= 25 C
-55 C to +200 C
-55 C to +150 C
2.2 C/W
O
O
O
O
1, 3, 4 & 6 = EMITTER
2 = BASE
5 = COLLECTOR
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
h
FE
C
OB
P
G
IMD
3
P
G
IMD
3
I
C
= 50 mA
I
C
= 50 mA
I
E
= 20 mA
T
C
= 25 C
O
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
25
50
4.0
5.0
100
50
8.0
9.0
-48
9
10
-60
UNITS
V
V
V
---
pF
dB
dBc
dB
dBc
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 25 V
Vision = -8.0 dB
I
C
= 1.0A
f = 1.0 MHz
I
CQ
= 60 mA
Sound = -10 dB
20
P
OUT
= 30.0 W
Chroma = -16 dB
V
CE
= 25 V
Vision = -8.0 dB
I
CQ
= 1.6 A
Sound = -10 dB
P
OUT
= 15 W
Chroma = -16 dB
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
