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BLV80-28 参数 Datasheet PDF下载

BLV80-28图片预览
型号: BLV80-28
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体晶体管射频
文件页数/大小: 1 页 / 19 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
BLV80-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
BLV80-28
is Designed for
28 Volt
Class C VHF Power
AmplifierApplications up to 175 MHz
.
PACKAGE STYLE .500 4L FLG
FEATURES:
• η
C
= 65 % min. at 80 W/175 MHz
P
G
= 6.5 dB min. at 80 W/175 MHz
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
P
DISS
T
J
T
STG
θ
JC
O
O
9.0 A
65 V
35 V
117 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
1.5 C/W
O
O
O
O
ORDER CODE: ASI10797
CHARACTERISTICS
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
C
OB
P
G
η
C
V
CC
= 25 V
I
C
= 20 mA
T
C
= 25 C
O
NONETEST
CONDITIONS
I
C
= 200 mA
I
E
= 10 mA
V
CB
= 30 V
V
CE
= 25 V
V
CB
= 30 V
P
OUT
= 80 W
I
C
= 3.5 A
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
65
35
4.0
1.5
15
100
150
6.5
7.0
UNITS
V
V
V
mA
---
pF
dB
%
f = 175 MHz
65
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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