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BLW32 参数 Datasheet PDF下载

BLW32图片预览
型号: BLW32
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅射频功率晶体管 [NPN SILICON RF POWER TRANSISTOR]
分类和应用: 晶体小信号双极晶体管射频小信号双极晶体管放大器
文件页数/大小: 1 页 / 17 K
品牌: ASI [ ADVANCED SEMICONDUCTOR ]
   
BLW32
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLW32
is Designed for
Television Band IV & V
Applications up to 860 MHz.
FEATURES:
Common Emitter
P
G
= 11 dB at 0.5 W/ 860 MHz
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
1.0 A
50 V
30 V
4.0 V
10.8 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
16 °C/W
DIM
A
B
C
D
E
F
G
H
I
J
K
.175 / 4.45
.275 / 6.99
.245 / 6.22
.640 / 16.26
.217 / 5.51
.285 / 7.24
MINIMUM
inches / mm
PACKAGE STYLE .280 4L STUD
A
45°
C
E
B
B
E
D
C
J
E
F
G
H
K
I
#8-32 UNC
MAXIMUM
inches / mm
1.010 / 25.65
.220 / 5.59
.270 / 6.86
.003 / 0.08
.117 / 2.97
.572 / 14.53
.130 / 3.30
1.055 / 26.80
.230 /5.84
.285 / 7.24
.007 / 0.18
.137 / 3.48
.255 / 6.48
ORDER CODE: ASI10677
CHARACTERISTICS
SYMBOL
BV
CES
BV
CEO
BV
EBO
I
CES
h
FE
P
G
IMD
1
I
C
= 15 mA
I
E
= 1.0 mA
V
CE
= 30 V
V
CE
= 25 V
T
C
= 25 °C
NONETEST
CONDITIONS
I
C
= 2.0 mA
MINIMUM TYPICAL MAXIMUM
50
30
4.0
0.5
UNITS
V
V
V
mA
---
dB
dBc
I
C
= 150 mA
I
C
= 150 mA
f = 860 MHz
20
11
-60
120
V
CE
= 25 V
P
OUT
= 0.5 W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1