BLW50F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLW50F
is Designed for
use in transmitters in the HF and VHF
band applications up tp 30 MHz.
PACKAGE STYLE .500 4L FLG
FEATURES:
•
P
G
= 14 dB min. at 75 W/30 MHz
•
IMD
3
= 50 dBc max. at 75 W
(PEP)
•
Omnigold™
Metalization System
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
θ
JC
3.25 A
110 V
55 V
4.0 V
87 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +150 °C
2.0 °C/W
1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER
ORDER CODE: ASI10834
O
CHARACTERISTICS
SYMBOL
BV
CES
BV
CE0
BV
EBO
I
CES
h
FE
C
ob
G
P
IMD
3
η
C
T
C
= 25 C
NONETEST
CONDITIONS
I
C
= 100 mA
I
C
= 200 mA
I
E
= 10 mA
V
CE
= 55 V
V
CE
= 6.0 V
V
CB
= 50 V
I
C
= 1.4 A
f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
110
55
4.0
10
19
---
50
100
14
---
37
---
-30
UNITS
V
V
V
mA
---
pF
dB
dBc
%
V
CE
= 50 V
P
OUT
= 75 W
(PEP)
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
