BLW75
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLW75
is Designed for
25V Large-Signal Amplifier
Applications, TV Transposers, and
Transmitters Operating in Band lll.
PACKAGE STYLE .380" 4L STUD (MOD STUD)
MAXIMUM RATINGS
I
C
V
CE
V
CB
P
DISS
T
J
T
STG
θ
JC
O
O
4.0 A
32 V
60 V
60 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +125 C
1.9 C/W
O
O
O
O
1 = COLLECTOR
2 & 4 = EMITTER
3 = BASE
CHARACTERISTICS
SYMBOL
BV
CER
BV
CBO
BV
CEO
BV
EBO
h
FE
C
ob
C
re
f
T
I
C
= 50 mA
I
C
= 50 mA
I
C
= 50 mA
I
E
= 10 mA
V
CE
= 25 V
V
CB
= 30 V
V
CE
= 30 V
V
CE
= 25 V
T
C
= 25 C
O
TEST CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
60
60
30
4.0
UNITS
V
V
V
V
I
C
= 2.0 A
f = 1.0 MHz
I
C
= 200 mA
I
C
= 6.0 A
f = 1.0 MHz
f = 100 MHz
20
45
90
55
800
120
---
pF
pF
MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
