BLW76
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI BLW76
is Designed for use
in class-AB or class-B operated high
power transmitters in the H.F. and
V.H.F bands and, as a Linear amplifier
in the H.F. band.
PACKAGE STYLE .380 4L FLG
B
.112 x 45°
A
E
C
E
C
D
E
Ø.125 NOM.
FULL R
J
.125
FEATURES:
•
P
G
= 18 dB min. at 75 W/30 MHz
•
IMD
3
= -30 dBc max. at 75 W
(PEP)
•
Omnigold™
Metalization System
B
F
I
GH
MAXIMUM RATINGS
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
I
C
V
CB
V
CE
P
DISS
T
J
T
STG
θ
JC
O
O
10 A
60 V
35 V
140 W @ T
C
= 25 C
-65 C to +200 C
-65 C to +150 C
1.05 C/W
O
O
O
O
A
B
C
D
E
F
G
H
I
J
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.004 / 0.10
.085 / 2.16
.160 / 4.06
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.240 / 6.10
.255 / 6.48
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CER
BV
EBO
I
CES
h
FE
C
ob
G
PE
IMD
3
I
C
= 50 mA
I
C
= 50 mA
I
E
= 10 mA
V
E
= 28 V
V
CE
= 5.0 V
V
CB
= 28 V
V
CE
= 25 V
T
C
= 25 C
O
NONETEST
CONDITIONS
R
BE
= 10
Ω
MINIMUM TYPICAL MAXIMUM
35
60
4.0
5.0
UNITS
V
V
V
mA
---
pF
dB
I
C
= 1.0 A
f = 1.0 MHz
I
CQ
= 3.2 A
Vision = -8 dB
Side Band = -16 dB
f = 225 MHz
Snd. = -7 dB
10
100
80
13.5
14.5
-55
P
REF
= 16 W
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1200
•
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
ASI [ ADVANCED SEMICONDUCTOR ]
